Medium power silicon LD-Mosfet

NEC'S 3.2 V, 2 W, L&S BAND

MEDIUM POWER SILICON LD-MOSFET

FEATURES

• LOW COST PLASTIC SURFACE MOUNT PACKAGE:

5.7x5.7x1.1 mm MAX

• HIGH OUTPUT POWER:

+32 dBm TYP

• HIGH LINEAR GAIN:

10 dB TYP @ 1.8 GHz

• HIGH POWER ADDED EFFICIENCY:

45% TYP at 1.8 GHz

• SINGLE SUPPLY:

2.8 to 6.0 V

NE5520279A

OUTLINE DIMENSIONS (Units in mm)

PACKAGE OUTLINE 79A

Notes:

1. DC performance is 100% testing. RF performance is testing several samples per wafer.

Wafer rejection criteria for standard devices is 1 reject for several samples.

2. Pin = 5 dBm

DESCRIPTION

NEC’s NE5520279A is an N-Channel silicon power laterally

dif fused MOSFET spe cial ly designed as the power ampliÞ er

for mobile and Þ xed wireless applications. Die are man u -

fac tured us ing NEC’s NEWMOS tech nol o gy (NEC’s 0.6 µm

WSi gate lat er al MOSFET) and housed in a surface mount

pack age.

• DIGITAL CELLULAR PHONES:

3.2 V DCS1800 Handsets

• 0.7-2.5 GHz FIXED WIRELESS ACCESS

• W-LAN

• SHORT RANGE WIRELESS

• RETAIL BUSI NESS RADIO

• SPECIAL MOBILE RADIO

APPLICATIONS

California Eastern Laboratories

0.9±0.2

0.2±0.1

(Bottom View)

3.6±0.2

1.5±0.2

0.8 MAX.

1.0 MAX.

Source

Gate Drain

0.4±0.15

5.7 MAX.

5.7 MAX.

0.6±0.15

0.8±0.15

4.4 MAX.

4.2 MAX.

Source

Gate Drain

A 2

0X001

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER NE5520279A

PACKAGE OUTLINE 79A

SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS

POUT Output Power dBm 30.5 32.0

GL Lin ear Gain dB 10

ηADD Pow er Added EfÞ ciency % 40 45

ID Drain Current mA 800

IGSS Gate-to-Source Leakage Current nA 100 VGS = 5.0 V

IDSS Saturated Drain Current nA 100 VDS = 6.0 V

(Zero Gate Volt age Drain Current)

VTH Gate Threshold Voltage V 1.0 1.4 1.9 VDS = 3.5 V, IDS = 1 mA

gm Transconductance S 1.3 VDS = 3.5 V, IDS = 700 mA

BVDSS Drain-to-Source Breakdown Voltage V 15 18 IDSS = 10 µA

RTH Thermal Resistance °C/W 8 Channel-to-Case

Functional

Characteristics

Electrical DC

Characteristics

f = 1.8 GHz, VDS = 3.2 V,

IDSQ = 700 mA, PIN = 25 dBm, except

PIN = 5 dBm for Linear Gain

ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)

SYMBOLS PARAMETERS UNITS RATINGS

VDS Drain Supply Voltage V 15.0

VGS Gate Supply Voltage V 5.0

ID Drain Current A 0.6

ID Drain Current (Pulse Test)2 A 1.2

PT Total Power Dissipation W 12.5

TCH Channel Temperature °C 125

TSTG Storage Temperature °C -55 to +125

RECOMMENDED OPERATING LIMITS

SYMBOLS PARAMETERS UNITS TYP MAX

VDS Drain to Source Voltage V 3.0 6.0

VGS Gate Supply Voltage V 2.0 3.0

IDS Drain Current1 A 0.8 1.0

PIN Input Power dBm 25 30

f = 1.8 GHz, VDS = 3.2 V

Note:

1. Operation in excess of any one of these parameters may result

in permanent damage.

2. Duty Cycle 50%, Ton = 1 s.

NE5520279A

Note:

1. Duty Cycle ≤ 50%, Ton ≤ 1 s.

PART NUMBER QTY

NE5520279A-T1 • 12 mm wide embossed taping.

• Gate pin faces the perforation side of

the tape.

• 1 kpcs/Reel

ORDERING INFORMATION

FREQUENCY (GHz) Zin (Ω) ZOL (Ω) 1

1.8 1.77 −j6.71 1.25 −j5.73

Note: